Abstract :
We model charging of the high aspect ratio 3-D trenches during plasma etching of dielectrics. The ion and electron fluxes were computed along the feature using Monte Carlo method. The surface potential profiles and electric field for the entire feature were generated by solving Poisson equation using finite-element method.
Keywords :
"Etching","Electrons","Plasma applications","Distribution functions","Surface charging","Poisson equations","Plasma materials processing","Insulation","Plasma devices","Dielectrics"
