DocumentCode :
3809037
Title :
Ce-doped YAG and LuAG Epitaxial Films for Scintillation Detectors
Author :
M. Kucera;K. Nitsch;M. Kubova;N. Solovieva;M. Nikl;J. A. Mares
Author_Institution :
Fac. of Math. & Phys., Charles Univ., Prague
Volume :
55
Issue :
3
fYear :
2008
Firstpage :
1201
Lastpage :
1205
Abstract :
Epitaxial garnet films of undoped and Ce3+ -doped yttrium aluminum garnet (YAG) and lutetium aluminum garnet (LuAG) were grown by the isothermal liquid phase epitaxy from two different fluxes: we used a standard PbO-B2O3 flux and, as a novelty, BaO-B2O3-BaF2 flux. It is shown that the films obtained from the lead-free BaO flux exhibited superior luminescent properties comparable with those of Czochralski grown single crystals. A detailed comparison of optical, luminescent, and kinetic properties of films grown from these two types of fluxes is made.
Keywords :
"Scintillation counters","Optical films","Aluminum","Garnet films","Yttrium","Isothermal processes","Epitaxial growth","Environmentally friendly manufacturing techniques","Crystals","Kinetic theory"
Journal_Title :
IEEE Transactions on Nuclear Science
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2007.913490
Filename :
4545146
Link To Document :
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