Title :
Baritt diodes for ka-band frequencies
Author :
J. Freyer;P.N. F?rg
Author_Institution :
Technische Universit?t M?nchen, Lehrstuhl f?r Allgemeine Elektrotechnik & Angewandte Elektronik, M?nchen, West Germany
fDate :
4/1/1980 12:00:00 AM
Abstract :
Design rules for uniformly doped Baritt diodes in the frequency range 8 to 40 GHz are derived. The fabrication of Ka-band Baritt diodes which deliver up to 1.7 mW is described. The theoretical and experimental results of the investigated diodes fit very well.
Journal_Title :
IEE Proceedings I - Solid-State and Electron Devices
DOI :
10.1049/ip-i-1.1980.0014
