DocumentCode :
3809626
Title :
Erratum: General model for defect formation in silicon dioxide
Author :
A.K.M. Zakzouk
Volume :
127
Issue :
6
fYear :
1980
fDate :
12/1/1980 12:00:00 AM
Firstpage :
336
Journal_Title :
IEE Proceedings I - Solid-State and Electron Devices
Publisher :
iet
ISSN :
0143-7100
Type :
jour
DOI :
10.1049/ip-i-1.1980.0065
Filename :
4642534
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3809626
