Addendum: Measurement of dg/dN and dn/dN and their dependence on photon energy in λ= 1.5 /m InGaAsP laser diodes

In the paper the carrier lifetime was assumed to be equal to the differential lifetime as measured using the technique of Olshansky et al. [1]. In this addendum that assumption is critically examined. The values of dg/dN and dn/dN are re-evaluated and found to be approximately 15% lower than previously estimated. The value of the a parameter, which depends on the ratio of these parameters, is unaffected, however.