DocumentCode :
3812588
Title :
Erratum: Contactless nondestructive technique for the measurement of minority-carrier lifetime and diffusion length in silicon
Author :
J.C. White;T.F. Unter;J.G. Smith
Volume :
1
Issue :
6
fYear :
1977
fDate :
11/1/1977 12:00:00 AM
Firstpage :
192
Journal_Title :
IEE Journal on Solid-State and Electron Devices
Publisher :
iet
ISSN :
0308-6968
Type :
jour
DOI :
10.1049/ij-ssed:19770030
Filename :
4807545
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3812588