DocumentCode :
3812937
Title :
Signal-noise neural network model for active microwave devices
Author :
F. Gunes;F. Gurgen;H. Torpi
Author_Institution :
Dept. of Electron. & Commun. Eng., Yildiz Tech. Univ., Istanbul, Turkey
Volume :
143
Issue :
1
fYear :
1996
Firstpage :
1
Lastpage :
8
Abstract :
New method for concurrently small-signal and the noise performance of active microwave devices is proposed. Here, the device is modelled by a black box whose small signal and noise parameters are evaluated through a neural network, based upon the fitting of both of these parameters over the operational bandwidth of the device. On using the concurrent modelling procedure, it has been found that, not only can the small-signal performance be simulated accurately, but also the prediction of noise performance is in much better agreement with measurements than those of recent published models.
Keywords :
"Neural networks","Microwave transistors","Semiconductor device modeling","Multiprocessing","Semiconductor device noise"
Journal_Title :
IEE Proceedings - Circuits, Devices and Systems
Publisher :
iet
ISSN :
1350-2409
Type :
jour
DOI :
10.1049/ip-cds:19960150
Filename :
487966
Link To Document :
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