DocumentCode :
3812975
Title :
Monolithic GaAs MESFET power sensor microsystem
Author :
T. Lalinsky;J. Kuzmik;M. Porges;S. Hascik;Z. Mozolova;L. Grno
Author_Institution :
Inst. of Electr. Eng., Slovak Acad. of Sci., Bratislava, Slovakia
Volume :
31
Issue :
22
fYear :
1995
Firstpage :
1914
Lastpage :
1915
Abstract :
The authors present the principle, technology and properties of a novel power sensor microsystem designed for very precise power measurement in a broad frequency range. Bulk micromachining technology on GaAs was implemented to obtain the desired parameters of the sensor.
Keywords :
"Gallium compounds","Power measurement","Micromachining","MESFET integrated circuits","Detectors","Microsensors"
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19951295
Filename :
490656
Link To Document :
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