Title :
High-performance InGaAs-on-silicon avalanche photodiodes
Author :
Pauchard, A. ; Bitter, M. ; Sengupta, D. ; Pan, Z. ; Hummel, S. ; Lo, Y.H. ; Kang, Y. ; Mages, P. ; Yu, K.L.
Author_Institution :
Nova Crystals Inc., San Jose, CA, USA
Abstract :
We have demonstrated a high-performance InGaAs-on-silicon APD that exhibits a very low dark current density of 0.7 mA/cm2, high avalanche gain (M≫100), an RC-limited bandwidth of 1.45 GHz, and a gain-bandwidth product of 290 GHz. We estimate that our device can achieve a sensitivity improvement of 5 dB compared to state-of-the-art InP-based APD receivers. We are currently measuring the APD excess noise factor. We will report this measurement at the conference.
Keywords :
avalanche photodiodes; dark conductivity; gallium arsenide; indium compounds; optical noise; optical receivers; semiconductor device noise; sensitivity; silicon; 1.45 GHz; APD excess noise factor; InGaAs-Si; RC-limited bandwidth; gain-bandwidth product; high-performance InGaAs-on-silicon APD; sensitivity improvement; very low dark current density; Bandwidth; Current measurement; Dark current; High speed optical techniques; Indium gallium arsenide; Lighting; Optical receivers; Optical sensors; Silicon; Voltage;
Conference_Titel :
Optical Fiber Communication Conference and Exhibit, 2002. OFC 2002
Print_ISBN :
1-55752-701-6
DOI :
10.1109/OFC.2002.1036407
