Title :
1.3 μm uncooled AlGaInAs-MQW DFB laser with λ/4-shifted grating
Author :
Takiguchi, T. ; Hanamaki, Y. ; Kadowaki, Takashi ; Tanaka, T. ; Watatani, C. ; Takemi, Masayoshi ; Mihashi, Y. ; Omura, E. ; Tomita, N.
Author_Institution :
Div. of High Frequency & Opt. Semicond., Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
1.3 μm uncooled AlGaInAs DFB-LDs with λ/4shifted grating have been successfully demonstrated. Relaxation oscillation frequency as high as 11.5 GHz has been obtained. Clear opening in the eye diagram under 10 Gbps direct modulation at 75°C has been also confirmed. Preliminary life test over 5000 hours with no failure indicates its excellent reliability. The 1.3 μm AlGaInAs DFB-LD with λ/4-shift grating is promising for the next generation high-speed data link systems such as 10 Gbps Ethernet.
Keywords :
III-V semiconductors; aluminium compounds; diffraction gratings; distributed feedback lasers; electro-optical modulation; gallium arsenide; indium compounds; laser reliability; life testing; optical fibre LAN; optical testing; optical transmitters; quantum well lasers; semiconductor device reliability; semiconductor device testing; λ/4-shifted grating; 1.3 μm uncooled AlGaInAs-MQW DFB laser; 1.3 micron; 11.5 GHz; 5000 h; 75 degC; AlGaInAs; AlGaInAs DFB-LDs; Ethernet; MQW lasers; eye diagram; high-speed data link systems; laser diodes; life test; relaxation oscillation frequency; reliability; Bit rate; Diode lasers; Ethernet networks; Frequency; Gratings; Optical devices; Optical materials; Power generation; Semiconductor lasers; Temperature distribution;
Conference_Titel :
Optical Fiber Communication Conference and Exhibit, 2002. OFC 2002
Print_ISBN :
1-55752-701-6
DOI :
10.1109/OFC.2002.1036455
