High-Speed Dual-Gate a-IGZO TFT-Based Circuits With Top-Gate Offset Structure

Author

Xiuling Li ; Di Geng ; Mativenga, Mallory ; Jin Jang

Author_Institution

Dept. of Inf. Display, Kyung Hee Univ., Seoul, South Korea

Volume

35

Issue

4

fYear

2014

fDate

Apr-14

Firstpage

461

Lastpage

463

Abstract

Owing to bulk-accumulation, dual-gate (DG) amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with top- and bottom-gates electrically tied together (DG-driving) exhibit 2.53 times higher ON-current and subthreshold voltage swing of ~ 180 mV/decade, which is 50% lower than that of single-gate (SG)-driven a-IGZO TFTs. Here, through simulation and experimental results, we demonstrate that the use of DG-driven back-channel-etched a-IGZO TFTs with a top-gate offset structure enhances the switching speed of a-IGZO TFT-based circuits. In particular, fabricated SG-driven and DG-driven 11-stage ring oscillators exhibited respective oscillating frequencies of 334 and 781 kHz.

Keywords

etching; gallium compounds; indium compounds; oscillators; thin film transistors; 11-stage ring oscillator; DG amorphous-indium-gallium-zinc-oxide thin-film transistor; DG-driven; InGaZnO; SG-driven; back-channel-etching; bulk-accumulation; frequency 334 kHz; frequency 781 kHz; high-speed dual-gate TFT-based circuit; single-gate-driven; top-gate offset structure; Capacitance; Inverters; Logic gates; Switching circuits; Thin film transistors; a-IGZO TFTs; dual gate; inverter; ring oscillator;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2305665

Filename

6747997