Title :
High-Speed Dual-Gate a-IGZO TFT-Based Circuits With Top-Gate Offset Structure
Author :
Xiuling Li ; Di Geng ; Mativenga, Mallory ; Jin Jang
Author_Institution :
Dept. of Inf. Display, Kyung Hee Univ., Seoul, South Korea
Abstract :
Owing to bulk-accumulation, dual-gate (DG) amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with top- and bottom-gates electrically tied together (DG-driving) exhibit 2.53 times higher ON-current and subthreshold voltage swing of ~ 180 mV/decade, which is 50% lower than that of single-gate (SG)-driven a-IGZO TFTs. Here, through simulation and experimental results, we demonstrate that the use of DG-driven back-channel-etched a-IGZO TFTs with a top-gate offset structure enhances the switching speed of a-IGZO TFT-based circuits. In particular, fabricated SG-driven and DG-driven 11-stage ring oscillators exhibited respective oscillating frequencies of 334 and 781 kHz.
Keywords :
etching; gallium compounds; indium compounds; oscillators; thin film transistors; 11-stage ring oscillator; DG amorphous-indium-gallium-zinc-oxide thin-film transistor; DG-driven; InGaZnO; SG-driven; back-channel-etching; bulk-accumulation; frequency 334 kHz; frequency 781 kHz; high-speed dual-gate TFT-based circuit; single-gate-driven; top-gate offset structure; Capacitance; Inverters; Logic gates; Switching circuits; Thin film transistors; a-IGZO TFTs; dual gate; inverter; ring oscillator;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2014.2305665
