Title :
Novel FTO/SRO/silicon optical sensors: characterization and applications
Author :
Malik, Alexander ; Aceves, Mariano ; Alcantara, Salvador
Author_Institution :
Electron. Dept., INAOE, Puebla, Mexico
Abstract :
In this paper, we describe the electrical and optoelectronic properties of new metal-insulator-silicon optical sensors, in which the silicon rich oxide layer is used as leaky insulator. Due to a leakage current through the insulator layer, two possible operating modes have been found for sensors. At the first mode and at certain voltage bias, the sensors are likewise photodetectors with an abrupt p-n junction. The second operating mode when the sensors investigated have the properties of a "usual" MOS capacitor takes place at a lowered bias. We show the possibility of combining these operating modes by applying to the structure a mixed DC and pulse voltage bias. With this, transient processes taking place can be used for the design of new optical sensors with internal signal gain.
Keywords :
MIS devices; elemental semiconductors; fluorine; leakage currents; optical sensors; photodetectors; silicon; silicon compounds; tin compounds; F doped SnO2 layer; FTO/SRO/Si optical sensors; MIS optical sensors; MOS capacitor; SnO2:F-SiO2-Si; abrupt p-n junction; dynamic I-V characteristics; electrical properties; fluorine-doped tin oxide; internal signal gain; leakage current; leaky insulator; mixed DC/pulse voltage bias; optoelectronic properties; photocurrent; photodetectors; silicon rich oxide layer; transient processes; voltage bias; Capacitive sensors; Dielectrics and electrical insulation; Leakage current; Metal-insulator structures; Optical sensors; P-n junctions; Photodetectors; Sensor phenomena and characterization; Silicon; Voltage;
Conference_Titel :
Sensors, 2002. Proceedings of IEEE
Print_ISBN :
0-7803-7454-1
DOI :
10.1109/ICSENS.2002.1037000
