Title :
A new CMOS pixel with lateral and vertical BJT structure
Author :
Kook, Youn-Jae ; Chung, Doo-Yeon ; Lee, Jong-Ho ; Park, Young-June ; Min, Hong-Shick
Author_Institution :
Sch. of Electr. Eng., Seoul Nat. Univ., South Korea
Abstract :
A new CMOS pixel which has lateral and vertical BJT structure is proposed. The structure is used for amplification in low light conditions. To reduce fixed pattern noise (FPN), correlated double sampling (CDS) is used. It has high responsivity compared with the conventional CMOS photodiode pixel and has advantages at low voltage condition so that it is suitable for the advanced CMOS process.
Keywords :
CMOS image sensors; integrated circuit noise; low-power electronics; phototransistors; CMOS image sensor; CMOS pixel; correlated double sampling; fixed pattern noise; lateral BJT structure; low light conditions; low power consumption; low voltage condition; phototransistor; responsivity; vertical BJT structure; CMOS image sensors; CMOS process; Computer science; Electronic equipment; Image sampling; Low voltage; MOSFET circuits; Noise reduction; Photodiodes; Phototransistors;
Conference_Titel :
Sensors, 2002. Proceedings of IEEE
Print_ISBN :
0-7803-7454-1
DOI :
10.1109/ICSENS.2002.1037009
