DocumentCode
381709
Title
A new CMOS pixel with lateral and vertical BJT structure
Author
Kook, Youn-Jae ; Chung, Doo-Yeon ; Lee, Jong-Ho ; Park, Young-June ; Min, Hong-Shick
Author_Institution
Sch. of Electr. Eng., Seoul Nat. Univ., South Korea
Volume
1
fYear
2002
fDate
2002
Firstpage
162
Abstract
A new CMOS pixel which has lateral and vertical BJT structure is proposed. The structure is used for amplification in low light conditions. To reduce fixed pattern noise (FPN), correlated double sampling (CDS) is used. It has high responsivity compared with the conventional CMOS photodiode pixel and has advantages at low voltage condition so that it is suitable for the advanced CMOS process.
Keywords
CMOS image sensors; integrated circuit noise; low-power electronics; phototransistors; CMOS image sensor; CMOS pixel; correlated double sampling; fixed pattern noise; lateral BJT structure; low light conditions; low power consumption; low voltage condition; phototransistor; responsivity; vertical BJT structure; CMOS image sensors; CMOS process; Computer science; Electronic equipment; Image sampling; Low voltage; MOSFET circuits; Noise reduction; Photodiodes; Phototransistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensors, 2002. Proceedings of IEEE
Print_ISBN
0-7803-7454-1
Type
conf
DOI
10.1109/ICSENS.2002.1037009
Filename
1037009
Link To Document