Title :
Examination of thin porous mono- and multilayer structures containing an underlayer of porous silicon
Author :
Leonov, Llya A. ; Pchelyakov, Oleg P. ; Mogilnikov, K.P.
Author_Institution :
Inst. of Semicond. Phys., Acad. of Sci., Novosibirsk, Russia
Abstract :
The paper is devoted to examination of porous silicon properties and structures obtained by molecular beam epitaxy (MBE) methods by methods of ellipsometric porosity measurement. These methods allow one to gain general porosity allocation of pores on the sizes, and also to explore adsorption and optical properties of a material. Also application of an ellipsometric porosity measuring method is described to encapsulating epifilm quality control.
Keywords :
adsorption; electric sensing devices; elemental semiconductors; ellipsometry; encapsulation; molecular beam epitaxial growth; porosity; porous semiconductors; quality control; semiconductor epitaxial layers; semiconductor growth; silicon; Si; adsorption; ellipsometric porosity measurement; encapsulating epifilm; molecular beam epitaxy; multilayer structures; porous semiconductors; quality control; Etching; Molecular beam epitaxial growth; Nonhomogeneous media; Optical buffering; Optical films; Optical materials; Physics; Sensor phenomena and characterization; Silicon; Substrates;
Conference_Titel :
Sensors, 2002. Proceedings of IEEE
Print_ISBN :
0-7803-7454-1
DOI :
10.1109/ICSENS.2002.1037162
