DocumentCode
381785
Title
Optical and electrical gas sensing properties of InxOyNz films
Author
Ando, Masanori ; Steffes, Harald ; Chabicovsk, Rupert ; Haruta, Masatake ; Stangl, Guenther
Author_Institution
Photonics Res. Inst., AIST, Ikeda, Japan
Volume
1
fYear
2002
fDate
2002
Firstpage
623
Abstract
In this paper we describe the optical and electrical gas sensing properties of InxOyNz films promoted by an ultra-thin gold overlayer. We have fabricated InxOyNz films with a nanocrystalline porous structure by RF-sputtering in Ar/N2 followed by an annealing process. Gold particles with 20-30 nm diameter on top of the InxOyNz films have been formed by DC-sputtering followed by an annealing process. We have investigated the optical H2 and NO2 sensing properties (change of absorbance) and also the electrical sensing effect (change of electrical resistance) for these two gases. A combined optical/electrical sensor for H2/NO2 is proposed.
Keywords
annealing; electric sensing devices; gas sensors; hydrogen; indium compounds; nanoporous materials; nitrogen compounds; optical sensors; semiconductor thin films; sensitivity; sputter deposition; sputtered coatings; visible spectra; 10 to 15 nm; Ar; Ar-N2; Au particles; Au-InON; DC-sputtering; H2; H2 sensing properties; InxOyNz films; N2; NO2; NO2 sensing properties; RF sputtering; absorbance change; annealing process; combined optical/electrical sensor; electrical gas sensing properties; electrical resistance change; nanocrystalline porous structure; optical gas sensing properties; ultra-thin Au overlayer; Absorption; Fluid flow measurement; Gold; Hydrogen; Optical films; Optical sensors; Temperature distribution; Temperature measurement; Temperature sensors; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensors, 2002. Proceedings of IEEE
Print_ISBN
0-7803-7454-1
Type
conf
DOI
10.1109/ICSENS.2002.1037173
Filename
1037173
Link To Document