Title :
New MEGA POWER DUAL/spl trade/ IGBT module with advanced 1200 V CSTBT chip
Author :
Yamada, Junji ; Yu, Yoshiharu ; Donlon, John F. ; Motto, Eric R.
Author_Institution :
Power Device Div., Mitsubishi Electr. Corp., Fukuoka, Japan
Abstract :
A new 1400 A/1200 V MEGA POWER DUAL/spl trade/ IGBT module has been developed for high power industrial applications. The new module incorporates the latest advances in chip technology to produce a device with the rugged safe operating area and low losses required in high power industrial applications. The new power chip is based on an optimized wide cell pitch carrier stored trench bipolar transistor (CSTBT). The module features an optimized high current dual (half bridge) package with low parasitic inductance and integrated features designed to allow simplified assembly of high power inverters.
Keywords :
bridge circuits; insulated gate bipolar transistors; isolation technology; modules; 1200 V; 1400 A; MEGA POWER DUAL IGBT module; carrier stored trench bipolar transistor chip; chip technology; half bridge package; high power industrial applications; high power inverters; integrated features; low losses; low parasitic inductance; optimized high current dual package; rugged safe operating area; wide cell pitch CSTBT; Assembly; Bipolar transistors; Bridge circuits; Design optimization; Inductance; Insulated gate bipolar transistors; Inverters; MOSFET circuits; Packaging; Voltage;
Conference_Titel :
Industry Applications Conference, 2002. 37th IAS Annual Meeting. Conference Record of the
Conference_Location :
Pittsburgh, PA, USA
Print_ISBN :
0-7803-7420-7
DOI :
10.1109/IAS.2002.1043830
