Characterization of a high-voltage press pack IGBT under soft-switching conditions

Author

Linzen, Dirk ; Von Bloh, Jochen ; De Doncker, Rik W.

Author_Institution

Inst. for Power Electron. & Electr. Drives, Univ. of Technol., Aachen, Germany

Volume

3

fYear

2002

fDate

13-18 Oct. 2002

Firstpage

2170

Abstract

To design high-power converter systems, a characterization of power losses of the utilized high-power devices is necessary. In this paper, the characterization of a high-voltage press pack IGBT (Toshiba ST1000EX21, 2500 V, 1000 A) under soft switching conditions at different operating temperatures is done. Based on these measured data the power losses of a three-phase inverter system is simulated. Finally, a comparison of the performance of the IGBT and a GTO (Toshiba SG 3000GXH24, 4500 V, 3000 A) is presented.

Keywords

bipolar transistor switches; insulated gate bipolar transistors; power bipolar transistors; power convertors; power semiconductor switches; semiconductor device measurement; semiconductor device models; semiconductor device packaging; semiconductor device testing; 1000 A; 2500 V; 3000 A; 4500 V; GTO performance comparison; Toshiba SG 3000GXH24; Toshiba ST1000EX21; high-power converter systems; high-voltage press pack IGBT characterisation; operating temperatures; power losses characterization; soft-switching conditions; three-phase inverter system; Circuit testing; Circuit topology; Inductors; Insulated gate bipolar transistors; Inverters; Leg; Power measurement; Resonance; Temperature; Zero voltage switching;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 2002. 37th IAS Annual Meeting. Conference Record of the

Conference_Location

Pittsburgh, PA, USA

ISSN

0197-2618

Print_ISBN

0-7803-7420-7

Type

conf

DOI

10.1109/IAS.2002.1043832

Filename

1043832