• DocumentCode
    383332
  • Title

    Measurement and simulation of electrical and thermal property of drain and source on insulator MOSFETs (DSOI)

  • Author

    He, Ping ; Lin, Xi ; Jiang, Bo ; Liu, Litian ; Tian, Lilin ; Li, Zhijian ; Dong, Yemin ; Chen, Meng ; Wang, Xi

  • Author_Institution
    Inst. of Microelectron., Tsinghua Univ., Beijing, China
  • fYear
    2002
  • fDate
    7-10 Oct 2002
  • Firstpage
    55
  • Lastpage
    57
  • Abstract
    In this work, the DSOI structure is realized and integrated with SOI and bulk devices on the same die using local SIMOX technology. The electrical and thermal properties are carefully measured. The substrate thermal resistances are measured and compared. 2D simulation with Ansys is also done for deep insight into the heat transport process of DSOI devices.
  • Keywords
    MOSFET; SIMOX; elemental semiconductors; semiconductor device measurement; semiconductor device models; silicon; silicon-on-insulator; thermal conductivity; 2D simulation; Ansys; DSOI structure; SOI; Si-SiO2; drain and source on insulator MOSFETs; electrical property; heat transport; local SIMOX technology; simulation; substrate thermal resistance; thermal property; MOSFETs; SIMOX; Semiconductor device modeling; Silicon; Silicon on insulator technology; Thermoresistivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, IEEE International 2002
  • Print_ISBN
    0-7803-7439-8
  • Type

    conf

  • DOI
    10.1109/SOI.2002.1044414
  • Filename
    1044414
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=383332