DocumentCode :
383337
Title :
Ultra-thin body fully-depleted SOI devices with metal gate (TaSiN) gate, high K (HfO2) dielectric and elevated source/drain extensions
Author :
Vandooren, A. ; Egley, S. ; Zavala, M. ; Franke, A. ; Barr, A. ; White, T. ; Samavedam, S. ; Mathew, L. ; Schaeffer, J. ; Pham, D. ; Conner, J. ; Dakshina-Murthy, S. ; Nguyen, B.-Y. ; White, B. ; Orlowski, M. ; Mogab, J.
Author_Institution :
Digital DNA Labs., Austin, TX, USA
fYear :
2002
fDate :
7-10 Oct 2002
Firstpage :
205
Lastpage :
206
Abstract :
We report for the first time physical and electrical characterization of ultra-thin (<100-150A) Fully-Depleted Silicon-On-Insulator (SOI) n and pMOSFETs using TaSiN gate and HfO2 dielectric with elevated Source/Drain extensions.
Keywords :
MOSFET; hafnium compounds; silicon compounds; silicon-on-insulator; tantalum compounds; 100 to 150 A; TaSiN-HfO2; elevated source/drain extensions; high K dielectric; metal gate; pMOSFET; ultra-thin body fully-depleted SOI devices; Hafnium compounds; MOSFETs; Silicon compounds; Silicon on insulator technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, IEEE International 2002
Print_ISBN :
0-7803-7439-8
Type :
conf
DOI :
10.1109/SOI.2002.1044477
Filename :
1044477
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=383337
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