Title :
High frequency operation of a MOSFET under an integrated inductor´s magnetic field
Author :
Nastos, Nikolaos ; Papananos, Yannis
Author_Institution :
Microelectron. Circuit Design Group, Nat. Tech. Univ. of Athens, Greece
Abstract :
In this paper the feasibility of placing integrated inductors over active devices and in particular MOS transistors is investigated. By this way we can minimize the silicon surface occupied by integrated circuits making them more compact and economic. To the best of our knowledge there is no relevant work still published. Next, we present the structure we have designed, preliminary measurement results and possible applications.
Keywords :
CMOS integrated circuits; MOSFET; inductors; integrated circuit design; integrated circuit measurement; magnetic field effects; semiconductor device measurement; CMOS; MOS transistors; MOSFET HF operation; active device superpositioned integrated inductors; integrated inductor magnetic fields; magnetic field effects; silicon surface minimization; CMOS technology; Frequency measurement; Inductors; Integrated circuit interconnections; Integrated circuit technology; MOSFET circuits; Magnetic field measurement; Magnetic fields; Radio frequency; Silicon;
Conference_Titel :
Electronics, Circuits and Systems, 2002. 9th International Conference on
Print_ISBN :
0-7803-7596-3
DOI :
10.1109/ICECS.2002.1046244
