DocumentCode :
3845
Title :
Fabrication and Characterization of Edge-Conformed Graphene-Silicon Waveguides
Author :
Horvath, Cameron ; Bachman, Daniel ; Guangcan Mi ; Vien Van
Author_Institution :
Appl. Nanotools Inc., Edmonton, AB, Canada
Volume :
27
Issue :
6
fYear :
2015
fDate :
March15, 15 2015
Firstpage :
585
Lastpage :
587
Abstract :
We report a simple and robust method for fabricating graphene-on-silicon waveguides on a silicon-on-insulator (SOI) chip. The waveguide consists of a silicon core covered by a graphene layer whose width exactly conforms with the width of the silicon core and whose length can be precisely controlled. Raman spectroscopy showed that the graphene layer retained its high quality after processing. Transmission measurements of fabricated graphene-on-silicon waveguides showed polarizationdependent propagation losses of 0.03 dB/μm for the transverseelectric (TE) mode and 0.07 dB/μm for the transverse-magnetic (TM) mode, in excellent agreement with theoretical simulations.
Keywords :
Raman spectra; elemental semiconductors; graphene; light polarisation; light transmission; optical fabrication; optical losses; optical testing; optical variables measurement; optical waveguides; silicon; silicon-on-insulator; C-Si; Raman spectroscopy; edge-conformed graphene-silicon waveguide characterization; edge-conformed graphene-silicon waveguide fabrication; polarization-dependent propagation losses; silicon-on-insulator chip; transmission measurements; transverse-electric mode; transverse-magnetic mode; Absorption; Graphene; Optical device fabrication; Optical polarization; Optical waveguides; Propagation losses; Silicon; Graphene photonics; graphene photonics; graphene-on-silicon waveguides;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2014.2385757
Filename :
7001619
Link To Document :
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