DocumentCode
3846546
Title
Impact of Photocapacitance on Phase Response of GaN/Sapphire SAW UV Sensor
Author
Venkata S. Chivukula;Daumantas Ciplys;Romualdas Rimeika;Michael S. Shur;Jinwei Yang;Remis Gaska
Author_Institution
Electrical, Computer, and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, 12180
Volume
10
Issue
4
fYear
2010
Firstpage
883
Lastpage
887
Abstract
The response of GaN/sapphire SAW delay line to the focused ultraviolet (UV) illumination was investigated at the SAW frequency 306 MHz and optical wavelength 375 nm. The UV irradiation of an interdigital transducer (IDT) led to 4 to 5 times larger phase change of transmitted signal than the irradiation of the surface acoustic wave (SAW) propagation path between the IDTs at the same UV light spot size of 2.4 mm. The UV-induced phase change has been attributed to the variation in IDT impedance due to photo-capacitive effect. Simulation of the SAW sensor phase response on the basis of this model is in good agreement with experimental results.
Keywords
"Gallium nitride","Surface acoustic waves","Delay lines","Lighting","Frequency","Optical sensors","Acoustic transducers","Optical surface waves","Acoustic waves","Acoustic propagation"
Journal_Title
IEEE Sensors Journal
Publisher
ieee
ISSN
1530-437X
Type
jour
DOI
10.1109/JSEN.2009.2036936
Filename
5427270
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