DocumentCode
3847112
Title
Performance Comparison of Different Organic Molecular Floating-Gate Memories
Author
Sarah Paydavosi;Hassen Abdu;Geoffrey J. Supran;Vladimir Bulović
Author_Institution
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, USA
Volume
10
Issue
3
fYear
2011
Firstpage
594
Lastpage
599
Abstract
In this paper, nanosegmented floating-gate memories consisting of a uniform set of identical organic dye molecules were fabricated and evaluated for potential use as programmable charge storage and charge retention elements in a future flash-memory technology. Viability of molecular thin films to serve as an energetically uniform set of ~1 nm in size charge-retaining sites is tested on a series of molecular materials, the best performing of which are thermally evaporated thin films of 3,4,9,10- perylenetetracarboxylic bis-benzimidazole. The initial results show device durability over 105 program/erase cycles, with hysteresis window of up to 3.3 V, corresponding to charge-storage density as high as 5 × 1012 cm-2. Data shows that charge retention is improved for molecular films with lower carrier mobility, which for the first time experimentally confirms in a coherent material set that inhibiting charge transport by nanosegmented floating-gate structures benefits the memory retention.
Keywords
"Nonvolatile memory","Flash memory","Transistors","Permission","SONOS devices","Material storage","Thin film devices","Charge carrier processes","Electron mobility","Materials testing"
Journal_Title
IEEE Transactions on Nanotechnology
Publisher
ieee
ISSN
1536-125X
Type
jour
DOI
10.1109/TNANO.2010.2056381
Filename
5504241
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