• DocumentCode
    3847112
  • Title

    Performance Comparison of Different Organic Molecular Floating-Gate Memories

  • Author

    Sarah Paydavosi;Hassen Abdu;Geoffrey J. Supran;Vladimir Bulović

  • Author_Institution
    Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, USA
  • Volume
    10
  • Issue
    3
  • fYear
    2011
  • Firstpage
    594
  • Lastpage
    599
  • Abstract
    In this paper, nanosegmented floating-gate memories consisting of a uniform set of identical organic dye molecules were fabricated and evaluated for potential use as programmable charge storage and charge retention elements in a future flash-memory technology. Viability of molecular thin films to serve as an energetically uniform set of ~1 nm in size charge-retaining sites is tested on a series of molecular materials, the best performing of which are thermally evaporated thin films of 3,4,9,10- perylenetetracarboxylic bis-benzimidazole. The initial results show device durability over 105 program/erase cycles, with hysteresis window of up to 3.3 V, corresponding to charge-storage density as high as 5 × 1012 cm-2. Data shows that charge retention is improved for molecular films with lower carrier mobility, which for the first time experimentally confirms in a coherent material set that inhibiting charge transport by nanosegmented floating-gate structures benefits the memory retention.
  • Keywords
    "Nonvolatile memory","Flash memory","Transistors","Permission","SONOS devices","Material storage","Thin film devices","Charge carrier processes","Electron mobility","Materials testing"
  • Journal_Title
    IEEE Transactions on Nanotechnology
  • Publisher
    ieee
  • ISSN
    1536-125X
  • Type

    jour

  • DOI
    10.1109/TNANO.2010.2056381
  • Filename
    5504241