DocumentCode :
3847622
Title :
High-Performance MIM Capacitors Using Novel PMNT Thin Films
Author :
Wenbin Chen;Kevin G. McCarthy;Alan Mathewson;Mehmet Copuroglu;Shane O´Brien;Richard Winfield
Author_Institution :
Tyndall National Institute, University College Cork, Cork, Ireland
Volume :
31
Issue :
9
fYear :
2010
Firstpage :
996
Lastpage :
998
Abstract :
High-performance metal-insulator-metal (MIM) capacitors using novel Pb(Mg0.33Nb0.67)0.65Ti0.35O3 (PMNT) thin films were fabricated and investigated. The dielectric properties of the PMNT capacitors were characterized at both dc and radio frequencies. A significant high-κ of 1115 (high capacitance density of 26 fF/μm2) for a PMNT MIM capacitor has been achieved. In addition, small leakage current density of 2 × 10-10 A/cm2 and low loss tangent of 0.0188 are also obtained. The results indicate that high-κ PMNT is a promising candidate material for high-performance MIM capacitors.
Keywords :
"MIM capacitors","Transistors","Dielectric thin films","Dielectric materials","Dielectric losses","Niobium","Radio frequency","Capacitance","High-K gate dielectrics","Ferroelectric materials"
Journal_Title :
IEEE Electron Device Letters
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2010.2052585
Filename :
5523882
Link To Document :
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