Title :
Effect of Solvents on the Ferromagnetic Behavior of Undoped BiFeO3 Prepared by Sol-Gel
Author :
Shah, Syed Mazhar H. ; Riaz, S. ; Akbar, Arslan ; Atiq, Shahid ; Naseem, Shahzad
Author_Institution :
Centre of Excellence in Solid State Phys., Univ. of the Punjab, Lahore, Pakistan
Abstract :
We here report the preparation of undoped BiFeO3 (BFO) thin films with sol-gel method using two solvents, i.e., acetic acid (AA) and ethylene glycol (EG). Films are annealed in the temperature range 100-300 °C for 60 mins. Films deposited using AA show the presence of bismuth rich phase Bi46Fe2O72 along with BFO in the intermediary conditions. Pure phase BFO is obtained when films are deposited using EG as a solvent even under as-deposited conditions, and the pure phase persists after annealing in the temperature range 100 °C-300 °C. This is the lowest temperature reported for the preparation of phase pure BFO. Bandgap of AA-based films lies in the range 2.58-2.64 eV and that of EG-based films in the range 2.77-2.81 eV. Reduced value of dielectric constant, in AA-based films, is because of the presence of bismuth rich impurity phase as compared with the films prepared using EG. Bands in FTIR spectra at 487 and 552 cm-1 are characteristic bands of FeO6 and BiO6 groups, indicating the formation of BFO. Films deposited using AA show weak ferromagnetic behavior, while those deposited using EG show strong ferromagnetic behavior as opposed to antiferromagnetic nature of BFO, due to suppression of spiral spin structure.
Keywords :
Fourier transform spectra; annealing; antiferromagnetic materials; bismuth compounds; dielectric thin films; energy gap; ferromagnetic materials; infrared spectra; magnetic thin films; permittivity; sol-gel processing; solvent effects; BiFeO3; FTIR spectra; acetic acid; annealing; antiferromagnetic nature; bandgap; bismuth rich impurity phase; dielectric constant; ethylene glycol; ferromagnetic behavior; intermediary conditions; sol-gel method; solvent effect; spiral spin structure; temperature 100 degC to 300 degC; thin films; time 60 min; wave number 487 cm-1; wave number 552 cm-1; Annealing; Bismuth; Dielectric constant; Films; Photonic band gap; Solvents; Temperature; Bismuth iron oxide; ferromagnetism; solvent; thin films;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2014.2309720