DocumentCode
384806
Title
Study of RC-snubber for series IGCTs
Author
Jiming, Lu ; Dan, Wang ; Chengxiong, Mao ; Shu, Fan
Author_Institution
Huazhong Univ. of Sci. & Technol., Wuhan, China
Volume
1
fYear
2002
fDate
13-17 Oct 2002
Firstpage
595
Abstract
A new power semiconductor device, integrated gate commutated thyristor (IGCT), is used in three-level high power and medium voltage inverters. It is claimed that the turn-off snubbers for IGCTs are not necessary. However, for series connected IGCTs, a simple snubber is usually needed. In this paper, the behavior of the RC-snubber is analyzed and the simulations are done. The effects based on the different parameters of the snubber are compared and discussed. Simulation results show that good performance can be achieved when RC-snubber is adopted.
Keywords
DC-AC power convertors; invertors; power semiconductor switches; snubbers; switching convertors; thyristor convertors; thyristors; RC-snubber; integrated gate commutated thyristor; power semiconductor device; series-connected IGCTs; three-level inverters; turn-off snubbers; Analytical models; Circuit simulation; Leakage current; Medium voltage; Power semiconductor devices; Pulse width modulation inverters; Resistors; Semiconductor devices; Snubbers; Thyristors;
fLanguage
English
Publisher
ieee
Conference_Titel
Power System Technology, 2002. Proceedings. PowerCon 2002. International Conference on
Print_ISBN
0-7803-7459-2
Type
conf
DOI
10.1109/ICPST.2002.1053612
Filename
1053612
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