• DocumentCode
    3848416
  • Title

    Laterally-coupled distributed feedback InGaSb/GaSb diode lasers fabricated by nanoimprint lithography

  • Author

    K. Haring;J. Viheriala;M.-R. Viljanen;J. Paajaste;R. Koskinen;S. Suomalainen;A. Laakso;K. Leinonen;T. Niemi;M. Guina

  • Author_Institution
    Tampere University of Technology, P.O. Box 692, Tampere FIN-33101, Finland
  • Volume
    46
  • Issue
    16
  • fYear
    2010
  • fDate
    8/5/2010 12:00:00 AM
  • Firstpage
    1146
  • Lastpage
    1147
  • Abstract
    The development of GaSb-based laterally-coupled distributed feedback diode lasers by means of cost-effective nanoimprint lithography process is presented. The separate confinement laser gain structure comprised two In0.2GaSb quantum wells. A grating pattern was defined and etched on the sides of the laser diode waveguide to enable distributed feedback. At room temperature the lasers emitted ~2mW output power in a single longitudinal mode at ~1945nm and exhibited a sidemode suppression ratio of over 30dB. A temperature dependent wavelength tuning coefficient of 0.16nm/°C was measured for the laser output.
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2010.1533
  • Filename
    5542581
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3848416