DocumentCode :
3848485
Title :
Nonlinear Compact Thermal Model of Power Semiconductor Devices
Author :
Krzysztof Gorecki;Janusz Zarebski
Author_Institution :
Department of Marine Electronics, Gdynia Maritime University, Gdynia, Poland
Volume :
33
Issue :
3
fYear :
2010
Firstpage :
643
Lastpage :
647
Abstract :
In this paper, the nonlinear compact thermal model of power semiconductor devices based on the Cauer network is proposed. The analytical description of the model and the method of the model parameter estimation are presented. The accuracy and usefulness of the model is verified experimentally for the selected metal-oxide-semiconductor (MOS) power transistor at its various cooling conditions.
Keywords :
"Power semiconductor devices","Temperature dependence","Thermal resistance","Semiconductor devices","Impedance","Cooling","Microscopy","Convolution","SPICE","Parameter estimation"
Journal_Title :
IEEE Transactions on Components and Packaging Technologies
Publisher :
ieee
ISSN :
1521-3331
Type :
jour
DOI :
10.1109/TCAPT.2010.2052052
Filename :
5549898
Link To Document :
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