Title :
Innovative Dual-Gate CNTFET Logic Cell: Investigation of Technological Dispersion Impact Through Compact Modeling
Author :
Maneux, Cristell ; Fregonese, Sebastien ; Zimmer, T.
Author_Institution :
IMS Lab., Univ. de Bordeaux, Talence, France
Abstract :
A compact model for dual-gate carbon nanotube FETs (dual-gate CNTFETs) is presented. This compact model includes the most significant mechanisms present in dual-gate CNTFETs such as the Schottky barrier at the metallic-nanotube interface, the band-to-band tunneling effect, and quasi-ballistic transport through the Landauer equation. An innovative logic circuit using the dual-gate CNTFET model is presented. Finally, the logic cell operation is analyzed while taking into account some of the CNT technological dispersions.
Keywords :
Schottky barriers; carbon nanotube field effect transistors; logic circuits; semiconductor device models; Landauer equation; Schottky barrier; band-to-band tunneling effect; carbon nanotube field effect transistors; dual-gate CNTFET logic cell; logic circuit; metallic-nanotube interface; quasi-ballistic transport; technological dispersion; CNTFETs; Capacitance; Junctions; Logic gates; Mathematical model; Schottky barriers; Tin; Carbon nanotube; circuit; compact modelling; dual-gate; graphene; nanoribbon; transistor;
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2014.2328351
