Innovative Dual-Gate CNTFET Logic Cell: Investigation of Technological Dispersion Impact Through Compact Modeling

Author

Maneux, Cristell ; Fregonese, Sebastien ; Zimmer, T.

Author_Institution

IMS Lab., Univ. de Bordeaux, Talence, France

Volume

13

Issue

6

fYear

2014

fDate

Nov. 2014

Firstpage

1053

Lastpage

1062

Abstract

A compact model for dual-gate carbon nanotube FETs (dual-gate CNTFETs) is presented. This compact model includes the most significant mechanisms present in dual-gate CNTFETs such as the Schottky barrier at the metallic-nanotube interface, the band-to-band tunneling effect, and quasi-ballistic transport through the Landauer equation. An innovative logic circuit using the dual-gate CNTFET model is presented. Finally, the logic cell operation is analyzed while taking into account some of the CNT technological dispersions.

Keywords

Schottky barriers; carbon nanotube field effect transistors; logic circuits; semiconductor device models; Landauer equation; Schottky barrier; band-to-band tunneling effect; carbon nanotube field effect transistors; dual-gate CNTFET logic cell; logic circuit; metallic-nanotube interface; quasi-ballistic transport; technological dispersion; CNTFETs; Capacitance; Junctions; Logic gates; Mathematical model; Schottky barriers; Tin; Carbon nanotube; circuit; compact modelling; dual-gate; graphene; nanoribbon; transistor;

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2014.2328351

Filename

6826499