Title :
Design of Ge–SiGe Quantum-Confined Stark Effect Electroabsorption Heterostructures for CMOS Compatible Photonics
Author :
Leon Lever;Zoran Ikonic;Alex Valavanis;Jonathan D. Cooper;Robert W. Kelsall
Author_Institution :
Sch. of Electron. &
Abstract :
We describe a combined 6 × 6 k · p and one-band effective mass modelling tool to calculate absorption spectra in Ge-SiGe multiple quantum well (MQW) heterostructures. We find good agreement with experimentally measured absorption spectra of Ge-SiGe MQW structures described previously in the literature, proving its predictive capability, and the simulation tool is used for the analysis and design of electroabsorption modulators. We employ strain-engineering in Ge-SiGe MQW systems to design structures for modulation at 1310 nm and 1550 nm.
Keywords :
"Absorption","Quantum well devices","Silicon germanium","Substrates","Strain","Silicon","Photonics"
Journal_Title :
Journal of Lightwave Technology
DOI :
10.1109/JLT.2010.2081345