Title :
An analytical model for electric field distribution of positively beveled abrupt PN junctions
Author :
Xing Bi Chen;J.K.O. Sin; Min Zhang; Bin Wang
Author_Institution :
Res. Inst. of Microelectron., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
An analytical model for the electric field distribution of positively beveled abrupt p-n junctions is presented. Simple expressions for the depletion width at the surface and the maximum field as a function of beveled angle have also been obtained. The analytical results show very good agreement compared with those obtained from numerical simulations. By using the method of superposition of a "common-mode" abrupt junction and a "differential-mode" abrupt junction, the model is also valid for the case of a dielectric with large permittivity covering the beveled surface.
Keywords :
"Analytical models","P-n junctions","Dielectrics","Numerical simulation","Boundary conditions","Silicon compounds","Permittivity","Numerical models","Semiconductor process modeling","Voltage"
Journal_Title :
IEEE Transactions on Electron Devices