• DocumentCode
    3849651
  • Title

    An analytical model for electric field distribution of positively beveled abrupt PN junctions

  • Author

    Xing Bi Chen;J.K.O. Sin; Min Zhang; Bin Wang

  • Author_Institution
    Res. Inst. of Microelectron., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
  • Volume
    44
  • Issue
    5
  • fYear
    1997
  • Firstpage
    869
  • Lastpage
    873
  • Abstract
    An analytical model for the electric field distribution of positively beveled abrupt p-n junctions is presented. Simple expressions for the depletion width at the surface and the maximum field as a function of beveled angle have also been obtained. The analytical results show very good agreement compared with those obtained from numerical simulations. By using the method of superposition of a "common-mode" abrupt junction and a "differential-mode" abrupt junction, the model is also valid for the case of a dielectric with large permittivity covering the beveled surface.
  • Keywords
    "Analytical models","P-n junctions","Dielectrics","Numerical simulation","Boundary conditions","Silicon compounds","Permittivity","Numerical models","Semiconductor process modeling","Voltage"
  • Journal_Title
    IEEE Transactions on Electron Devices
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.568051
  • Filename
    568051