DocumentCode :
3849874
Title :
Mixed-Signal Organic Integrated Circuits in a Fully Photolithographic Dual Threshold Voltage Technology
Author :
Ivan Nausieda;Kevin Kyungbum Ryu;David Da He;Akintunde Ibitayo Akinwande;Vladimir Bulovic;Charles G. Sodini
Author_Institution :
Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA, USA
Volume :
58
Issue :
3
fYear :
2011
Firstpage :
865
Lastpage :
873
Abstract :
Analog & digital circuits implemented in a dual threshold voltage (VT) p-channel organic technology are presented. The dual VT organic technology is compatible with large-area and mechanically flexible substrates due to its low processing temperature (≤ 95°C) and scalable patterning techniques. We demonstrate the first analog & digital organic integrated circuits produced by a dual-gate metal process. The analog circuits are powered by a 5-V supply and include a differential amplifier and a two-stage uncompensated operational amplifier (op-amp). A dynamic comparator is measured to have an input offset voltage of 200 mV and latching time of 119 ms. Both the comparator and the op-amp dissipate 5 nW or less. Area-minimized digital logic is presented. Inverters powered by a 3-V supply were measured to have positive noise margins and consumed picowatts of power. An 11-stage ring oscillator, also powered by a 3-V supply, swings near rail to rail at 1.7 Hz. These results demonstrate dual threshold voltage process feasibility for large-area flexible mixed-signal organic integrated circuits.
Keywords :
"Inverters","Voltage measurement","Organic thin film transistors","Current measurement","Semiconductor device measurement","Ring oscillators"
Journal_Title :
IEEE Transactions on Electron Devices
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2011.2105489
Filename :
5710973
Link To Document :
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