Title :
Physics-based large-signal sensitivity analysis of microwave circuits using technological parametric sensitivity from multidimensional semiconductor device models
Author :
F. Bonani;S.D. Guerrieri;F. Filicori;G. Ghione;M. Pirola
Author_Institution :
Dipt. di Elettronica, Politecnico di Torino, Italy
Abstract :
The authors present an efficient approach to evaluate the large-signal (LS) parametric sensitivity of active semiconductor devices under quasi-periodic operation through accurate, multidimensional physics-based models. The proposed technique exploits efficient intermediate mathematical models to perform the link between physics-based analysis and circuit-oriented simulations, and only requires the evaluation of dc and ac small-signal (dc charge) sensitivities under general quasi-static conditions. To illustrate the technique, the authors discuss examples of sensitivity evaluation, statistical analysis, and doping profile optimization of an implanted MESFET to minimize intermodulation which makes use of LS parametric sensitivities under two-tone excitation.
Keywords :
"Sensitivity analysis","Microwave devices","Semiconductor devices","Multidimensional systems","Semiconductor process modeling","Mathematical model","Performance evaluation","Circuit analysis","Performance analysis","Analytical models"
Journal_Title :
IEEE Transactions on Microwave Theory and Techniques