Effects of proton irradiation on AlGaN/InGaN/GaN green light emitting diodes

The influence or proton irradiation on properties of commercial single-quantum-well AlGaN/InGaN/GaN green-light emitting diodes is studied. A dose of 2.3 Mrad degraded the room-temperature light emission from the irradiated area of the device, while the electrical device characteristics remain practically unchanged. At low temperatures (/spl sime/15 K), however, the light emission recovers almost entirely, indicating the formation or a nonradiative recombination channel within the active layer of the device.