DocumentCode :
3851392
Title :
Current self-distribution effect in diode lasers: analytic criterion and numerical study
Author :
P.G. Eliseev;A.G. Glebov;M. Osinski
Author_Institution :
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
Volume :
3
Issue :
2
fYear :
1997
Firstpage :
499
Lastpage :
506
Abstract :
We consider a current self-distribution (current crowding) effect that can be induced by stimulated recombination in diode lasers. In particular, we identify conditions when the injection current density can be sensitive to inhomogeneities of carrier recombination rate. In response to a locally enhanced carrier consumption, the current injection becomes itself inhomogeneous. An analytic criterion is proposed to predict when this effect can lead to suppression of spatial hole-burning, providing improved laser mode stability and spatial stability of the laser beam. Adequacy of the proposed analytic approach is verified by numerical modeling.
Keywords :
"Diode lasers","Laser stability","Laser modes","Charge carrier density","Radiative recombination","Current density","Semiconductor lasers","Stability analysis","Voltage","Charge carrier lifetime"
Journal_Title :
IEEE Journal of Selected Topics in Quantum Electronics
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/2944.605700
Filename :
605700
Link To Document :
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