Title :
Highly sensitive microwave detecting Au-TiBx(ZrBx)-n-SiC 6H diodes
Author :
Boltovets, N.S. ; Ivanov, V.N. ; Zorenko, A.V. ; Konakova, R.V. ; Kudrik, Ya.Ya. ; Milenin, V.V. ; Abdizhaliev, S.K.
Author_Institution :
State Res. Inst. Orion, Kiev, Ukraine
Abstract :
We present electrical parameters and characteristics of microwave detecting Au-TiBx(ZrBx)-n-SiC 6H diodes. The possibility of using these diodes as power sensors for application in a wide power range (including power up to 1 W) was studied. It is shown that heat-resistant Schottky-barrier diodes (fabricated using magnetron sputtering onto SiC wafers) based on TiBx(ZrBx) interstitial phases demonstrate voltage sensitivity of 1800 $3500 mV/mW at input power of 10-7 W.
Keywords :
Schottky diodes; gold; interstitials; microwave detectors; microwave measurement; semiconductor device measurement; silicon compounds; sputter deposition; titanium compounds; wide band gap semiconductors; zirconium compounds; 1 W; 10-7 W; Au-TiB-SiC; Au-ZrB-SiC; Au/TiB(ZrBx)/n-SiC 6H Schottky-barrier diodes; TiB/ZrB interstitial phases; heat-resistant Schottky-barrier diodes; high-sensitivity microwave detection; input power levels; magnetron sputtering; microwave detectors; microwave measurement; sensor voltage sensitivity; wide power range sensors; Electromagnetic heating; Materials science and technology; Microwave devices; Microwave technology; Physics; Schottky diodes; Semiconductor diodes; Silicon carbide; Sputtering; Temperature;
Conference_Titel :
Semiconductor Conference, 2002. CAS 2002 Proceedings. International
Print_ISBN :
0-7803-7440-1
DOI :
10.1109/SMICND.2002.1105799
