An optimised bipolar lateral magnetotransistor

Author

Avram, Marioara ; Neagoe, Otilia ; Codreanu, Cecilia ; Voitincu, Corneliu ; Simion, Monica

Author_Institution

Nat. Inst. for Res. & Dev. in Microtechnologies, Bucharest, Romania

Volume

1

fYear

2002

fDate

2002

Firstpage

83

Abstract

A novel bipolar magnetotransistor for a parallel to surface field is designed in standard integrated bipolar technology. It consists of a pair of identical vertical npn transistors, antisymmetrically oriented, whose bases are made up of two diffusions with different depths. Each transistor is practically constructed of two structures connected in parallel. The only difference between them consists of the thickness and impurity concentration within the base. High sensitivity, low offset, and high linearity over large ranges of magnetic field induction are obtained.

Keywords

Hall effect transducers; bipolar integrated circuits; bipolar transistors; circuit optimisation; diffusion; doping profiles; integrated circuit design; integrated circuit measurement; magnetic sensors; magnetoelectronics; Hall voltage; antisymmetrically oriented vertical npn transistors; base thickness/impurity concentration; bipolar magnetic sensors; device sensitivity/offset/linearity; integrated bipolar technology; magnetic field induction range; optimised bipolar lateral magnetotransistors; parallel connected transistor structures; parallel to surface field measurement; transistor base diffusion depth; Bipolar integrated circuits; Impurities; Kinetic theory; Linearity; Magnetic fields; Magnetic sensors; Research and development; Standards development; Temperature sensors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2002. CAS 2002 Proceedings. International

Print_ISBN

0-7803-7440-1

Type

conf

DOI

10.1109/SMICND.2002.1105807

Filename

1105807