DocumentCode :
385255
Title :
Photoluminescence of the nanocrystallites embedded in silicon oxide films
Author :
Miu, Mihaela ; Kleps, Irina ; Angelescu, Anca ; Simion, Monica ; Bragaru, Adina
Author_Institution :
Nat. Inst. for Res. & Dev. in Microtechnologies, Bucharest, Romania
Volume :
1
fYear :
2002
fDate :
2002
Firstpage :
139
Abstract :
In the field of silicon based room temperature light emitting materials, besides porous silicon fabricated by anodization, other kinds of films fabricated by sputtering, gas vaporization, and chemical vapor deposition were investigated. These films are two phase structures, with nanocrystallites embedded in an amorphous matrix. From a technological point of view, the chemical stability and robustness of these materials are more suitable for future applications, unlike the rather delicate nature of porous silicon.
Keywords :
annealing; chemical vapour deposition; crystallites; elemental semiconductors; island structure; nanostructured materials; photoluminescence; silicon; silicon compounds; sputter deposition; stability; vaporisation; 1000 degC; 1100 degC; Si islands; Si nanocrystallite embedded silicon oxide films; SiO-Si; SiO2-SiO-Si; amorphous matrix embedded nanocrystallites; anodization fabricated porous silicon; chemical stability; chemical vapor deposition; gas vaporization; material robustness; photoluminescence; photoluminescence spectra; silicon based room temperature light emitting materials; silicon crystallites; silicon monoxide; sputtering; thermal annealing; two phase structures; Amorphous materials; Chemical technology; Chemical vapor deposition; Nanostructures; Photoluminescence; Robust stability; Semiconductor films; Silicon; Sputtering; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 2002. CAS 2002 Proceedings. International
Print_ISBN :
0-7803-7440-1
Type :
conf
DOI :
10.1109/SMICND.2002.1105819
Filename :
1105819
Link To Document :
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