• DocumentCode
    3852608
  • Title

    A Monolithically-Integrated Optical Receiver in Standard 45-nm SOI

  • Author

    Michael Georgas;Jason Orcutt;Rajeev J. Ram;Vladimir Stojanovic

  • Author_Institution
    Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge
  • Volume
    47
  • Issue
    7
  • fYear
    2012
  • fDate
    7/1/2012 12:00:00 AM
  • Firstpage
    1693
  • Lastpage
    1702
  • Abstract
    Integrated photonics has emerged as an I/O technology that can meet the throughput demands of future many-core processors. Taking advantage of the low capacitance environment provided by monolithic integration, we developed an integrating receiver front-end built directly into a clocked comparator, achieving high sensitivity and energy-efficiency. A simple model of the receiver provides intuition on the effects of wiring and photodiode capacitance, and leads to a photodiode-splitting technique enabling improved sensitivity at higher data rates. The receiver is characterized in situ and shown to operate with μA-sensitivity at 3.5 Gb/s with a power consumption of 180 μ W (52 fJ/bit) and area of 108 μm2 . This work demonstrates that photonics and electronics can be jointly integrated in a standard 45-nm SOI process.
  • Keywords
    "Capacitance","Optical receivers","Sensitivity","Clocks","Optical sensors","Bandwidth"
  • Journal_Title
    IEEE Journal of Solid-State Circuits
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.2012.2191684
  • Filename
    6203614