Numerical and analytical study of 6H-SiC detectors with high UV performance

Author

Brezeanu, G. ; Udrea, F. ; Mihaila, A. ; Amaratunga, Gehan ; Millan, J. ; Godignon, P. ; Badila, M. ; Draghici, F. ; Boianceanu, C. ; Brezeanu, M.

Author_Institution

Bucharest Univ., Romania

Volume

1

fYear

2002

fDate

2002

Firstpage

185

Abstract

The paper is concerned with the investigation of the UV detection performances of 6H-SiC Schottky and junction barrier diodes with oxide ramp termination. The devices exhibit a high responsivity in UV spectral range with excellent visible rejection ratio. An accurate model for the determination of the quantum efficiency is developed. Excellent agreement between model and simulated data is achieved.

Keywords

Schottky diodes; dielectric thin films; semiconductor device measurement; semiconductor device models; semiconductor diodes; silicon compounds; ultraviolet detectors; wide band gap semiconductors; 6H-SiC detectors; Schottky diodes; SiC; UV performance; UV spectral range; junction barrier diodes; oxide ramp termination; quantum efficiency model; responsivity; simulated data; visible rejection ratio; Current density; Detectors; Leakage current; Performance analysis; Photodetectors; Schottky diodes; Semiconductor diodes; Silicon carbide; Temperature; Termination of employment;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2002. CAS 2002 Proceedings. International

Print_ISBN

0-7803-7440-1

Type

conf

DOI

10.1109/SMICND.2002.1105827

Filename

1105827