DocumentCode
385262
Title
Thick and thin diaphragms fabrication using gold-silicon eutectic
Author
Iliescu, Ciprian ; Miao, Jianmin ; Poenar, Daniel P. ; Sun, Tietun
Author_Institution
Nanyang Technol. Univ., Singapore, Singapore
Volume
1
fYear
2002
fDate
2002
Firstpage
189
Abstract
Our experiments highlight the fact that gold-silicon (Au-Si) eutectics are fairly inert to the attack of both anisotropic and isotropic wet etchants of Si (e.g. KOH, TMAH or HF/HNO3 solutions). Therefore, this interfacial eutectic can be used as etch-stop layers in wet etching-based bulk micromachining. This paper shows how Au-Si eutectic layers may be employed for thick and thin diaphragm fabrication. The paper discusses three major directions of interest: eutectic formation, thick silicon diaphragm fabrication and thin Au-Si (eutectic) diaphragm generation. The application areas of these diaphragms include pressure sensors (high-pressure range) and microphones.
Keywords
diaphragms; etching; eutectic alloys; gold alloys; interface structure; micromachining; microphones; pressure sensors; silicon alloys; Au-Si eutectic layer; AuSi; Si; anisotropic wet etchants; etchant inertness; eutectic formation; gold-silicon eutectic; interfacial eutectic etch-stop layers; isotropic wet etchants; microphones; pressure sensors; thick diaphragm fabrication; thick silicon diaphragm fabrication; thin Au-Si diaphragm generation; thin diaphragm fabrication; wet etching-based bulk micromachining; Annealing; Chromium; Fabrication; Gold; Silicon; Temperature; Thickness measurement; Time measurement; Wafer bonding; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2002. CAS 2002 Proceedings. International
Print_ISBN
0-7803-7440-1
Type
conf
DOI
10.1109/SMICND.2002.1105828
Filename
1105828
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