Title :
Electrical and optical behavior of the SiC photodetectors
Author :
Draghici, F. ; Mitu, F. ; Brezeanu, G. ; Badila, M. ; Boianceanu, C. ; Agache, P. ; Enache, I.
Author_Institution :
Bucharest Univ., Romania
Abstract :
The paper presents an electrical and optical investigation of Schottky transparent contact UV detectors built on SiC. The device spectral analysis evinced a relatively constant low sensitivity in the 270-360 nm range completed with a peak higher sensitivity centered on 380 nm for 360-400 nm ranges.
Keywords :
Schottky barriers; sensitivity analysis; silicon compounds; spectral analysis; transparency; ultraviolet detectors; wide band gap semiconductors; 270 to 360 nm; 360 to 400 nm; 380 nm; Schottky transparent contact UV detectors; SiC; SiC photodetectors; constant low sensitivity; electrical behavior; optical behavior; peak sensitivity; spectral analysis; Contacts; Detectors; Gold; High speed optical techniques; Optical sensors; Photodetectors; Semiconductor diodes; Silicon carbide; Stimulated emission; Wavelength measurement;
Conference_Titel :
Semiconductor Conference, 2002. CAS 2002 Proceedings. International
Print_ISBN :
0-7803-7440-1
DOI :
10.1109/SMICND.2002.1105829
