Title :
Variable-gain inversion layer emitter phototransistor in CMOS technology
Author :
Jankovic, Nebojsa ; Jovanovic, Elva
Author_Institution :
Fac. of Electron. Eng., Nis Univ., Serbia
Abstract :
The vertical bipolar phototransistor in CMOS technology employing the inversion emitter concept has been analysed by simulation and experiment. It is found that the inversion emitter substantially increases current gain, particularly at low current levels, which yields a high output photo-current. In addition, current gain and photo-current magnitude can be controlled by the external gate voltage which gives the potential for a number of novel applications.
Keywords :
CMOS integrated circuits; circuit simulation; integrated circuit measurement; integrated circuit modelling; inversion layers; photoconductivity; phototransistors; CMOS technology; current gain; external gate voltage; inversion emitter concept; output photo-current magnitude; simulation; variable-gain inversion layer emitter phototransistor; vertical bipolar phototransistor; Analytical models; CMOS image sensors; CMOS process; CMOS technology; Optical beams; Photoconductivity; Phototransistors; Threshold voltage; Unified modeling language; Voltage control;
Conference_Titel :
Semiconductor Conference, 2002. CAS 2002 Proceedings. International
Print_ISBN :
0-7803-7440-1
DOI :
10.1109/SMICND.2002.1105835
