Title :
Thickness dependent properties of CdS/CdTe hetero-photo-elements
Author :
Potlog, T. ; Sites, J. ; Gashin, P. ; Ghimpu, L.
Author_Institution :
Dept. of Phys., Moldova State Univ., Chisinau, MD, USA
Abstract :
The analysis of the I-V characteristics of a CdS/CdTe heterojunction shows the strong influence of the time of deposition of CdTe on the photo-electrical parameters. The best parameters with no antireflection coating, Jsc=24.8 mA/cm2, Voc=0.82 V, FF=0.48, η=9.76% are obtained in the case when time of deposition of CdTe is 3.5 min. The photoresponse decreases with increasing CdTe thickness. The photosensitivity covers the wavelength range from 0.50 μm to 0.86 μm for all cells. The most efficient carrier generation and collection is for the structure with the time of the CdTe layer deposition of 3.5 min.
Keywords :
II-VI semiconductors; cadmium compounds; electric current; photoconductivity; photoelectric devices; semiconductor growth; sublimation; vapour deposited coatings; 0.5 to 0.86 micron; 0.82 V; 3.5 min; CdS-CdTe; CdS/CdTe hetero-photo-elements; CdS/CdTe heterojunction; CdTe deposition time; CdTe thickness; I-V characteristics; antireflection coating; carrier collection; carrier generation; close space sublimation method; photo-electrical parameters; photoresponse; photosensitivity wavelength range; thickness dependent properties; Annealing; Conductivity; Grain boundaries; III-V semiconductor materials; Lighting; Ohmic contacts; Physics; Radiative recombination; Short circuit currents; Voltage;
Conference_Titel :
Semiconductor Conference, 2002. CAS 2002 Proceedings. International
Print_ISBN :
0-7803-7440-1
DOI :
10.1109/SMICND.2002.1105836
