Title :
Impact of low gamma radiation dose on electrical trap related effects in AlGaN/GaN HEMTs
Author :
F. Berthet;Y. Guhel;B. Boudart;H. Gualous;J.L. Trolet;M. Piccione;C. Gaquiere
Author_Institution :
LUSAC, Universite de Caen Basse-Normandie, Site Universitaire, France
fDate :
8/16/2012 12:00:00 AM
Abstract :
Presented is an original method to decrease electrical trap effects in AlGaN/GaN HEMTs by using a low gamma radiation dose. In fact, a partial annihilation of trap related effects on static electrical characteristics has been observed when the devices are irradiated with a gamma radiation dose of 4 krad.
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2012.1966
