DocumentCode :
3853185
Title :
High-power integrated ultrafast semiconductor disk laser: Multi-Watt 10 GHz pulse generation
Author :
V.J. Wittwer;M. Mangold;M. Hoffmann;O.D. Sieber;M. Golling;T. Sudmeyer;U. Keller
Author_Institution :
Department of Physics, Institute for Quantum Electronics, ETH Zurich, Zurich 8093, Switzerland
Volume :
48
Issue :
18
fYear :
2012
fDate :
8/30/2012 12:00:00 AM
Firstpage :
1144
Lastpage :
1145
Abstract :
Presented is an optically pumped modelocked integrated external-cavity surface emitting laser (MIXSEL) with a pulse repetition rate of 10 GHz, generating picosecond pulses at 2.4 W average output power at a centre wavelength of 963 nm. The MIXSEL structure integrates both the absorber and the gain layers within the same wafer. The saturable absorber is a single layer of self-assembled InAs quantum dots (QD) and the gain is obtained with seven InGaAs quantum wells. It is shown that the picosecond pulse duration is limited by the slow recovery time of the integrated QD saturable absorber.
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2012.2405
Filename :
6294566
Link To Document :
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