DocumentCode :
3855482
Title :
Optimal gate drive circuit design for ZVS operation of SiC-JFET devices
Author :
H. Sarnago;O. Lucia;A. Mediano;J. M. Burdío
Author_Institution :
Electron. Eng. &
Volume :
48
Issue :
25
fYear :
2012
fDate :
12/6/2012 12:00:00 AM
Firstpage :
1621
Lastpage :
1622
Abstract :
The use of resonant converters in high-frequency and high-efficiency power converters is widespread. Recent developments in wide bandgap materials, such as silicon carbide and gallium nitride, and their commercial availability, are boosting their use in power converters. Proposed is a reduced component-count gate drive circuit for the zero voltage switching operation of resonant converters featuring SiC JFETs and its design procedure is proposed. The trade-off between on-state losses and driver activation losses is detailed, reaching a point of maximum device efficiency. The proposal is experimentally verified using a resonant converter applied to domestic induction heating.
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2012.3573
Filename :
6407254
Link To Document :
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