DocumentCode :
385751
Title :
A Two-Stage Monolithic IF Amplifier Utilizing a High Dielectric Constant Capacitor
Author :
Chu, A. ; Mahoney, L.J. ; Elta, M.E. ; Courtney, W.E. ; Piacentini, W.J. ; Donnelly, J.P.
Volume :
82
Issue :
1
fYear :
1982
fDate :
30103
Firstpage :
61
Lastpage :
63
Abstract :
A two-stage monolithic IF amplifier incorporating sputtered Ta/sub2/05 capacitor has been fabricated. The monolithic capacitor is based on a composite layer structure consisting of Au, Ta, Ta205, Ta and Au. This layered structure is sequentially deposited in a single sputtering run, which eliminates all possibility of particulate contamination. As a result a thin pinhole-free dielectric layer can be deposited over large areas, and 140 pF capacitors have been fabricated with excellent yields. The large unit area capacitance of 1500 pF/mm2 available with the present process has the potential for reducing the size and cost of both microwave monolithic circuits and hybrid thin-film circuits.
Keywords :
Capacitance; Capacitors; Dielectric materials; Electrodes; Fabrication; Frequency; Gold; High-K gate dielectrics; Microwave circuits; Sputtering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits
Type :
conf
DOI :
10.1109/MCS.1982.1112183
Filename :
1112183
Link To Document :
بازگشت