Title :
A Miniature 2-18 GHz Monolithic GaAs Distributed Amplifier
Author :
Kennan, Wayne ; Andrade, Tom ; Huang, Charlle
Abstract :
A 2-18 GHz monolithic GaAs distributed amplifier has been developed with over 6dB gain +- 0.5 dB gain ripple, less ttlan 2.0 input and output VSWR less than 7.5 dB noise figure, and greater than 17 dBm power output capability. The amplifier is designed with dual-gate GaAs FET´s and measures .75 mm by .85 mm (.64 mm2). The small size insures high circuit yield and makes the part cost effective for general applications.
Keywords :
Circuits; Degradation; Distributed amplifiers; FETs; Fabrication; Gallium arsenide; Inductance; Radio frequency; Resistors; Transmission lines;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits
DOI :
10.1109/MCS.1984.1113599
