DocumentCode
385761
Title
A GaAs Monolithic 6-18 GHz Medium Power Amplifier
Author
Palmer, C.D. ; Saunier, P. ; Williams, R.E.
Volume
84
Issue
1
fYear
1984
fDate
30803
Firstpage
55
Lastpage
57
Abstract
A monolithic two-stage medium power amplifier, fabricated on GaAs and designed to cover the 6-18 GHz frequency band, is described. Amplifier circuit topology, process sequence, and measured performance results are presented. Chips from several epitaxial and ion implanted slices have demonstrated good output power and gain performance across the 7.0-17.0 GHz band, achieving an average of 27.3 dBm (540 mW or 0.45 watts per millimeter of gate width) at 18.8 percent power-added efficiency, with an average gain of 10.6 dB, at 1 dB gain compression.
Keywords
Circuit topology; Electromagnetic heating; FETs; Frequency; Gallium arsenide; MMICs; Performance gain; Power amplifiers; Power generation; Sensitivity analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter-Wave Monolithic Circuits
Type
conf
DOI
10.1109/MCS.1984.1113603
Filename
1113603
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